Oxygen atom containing film for a thin-film electroluminescent e

Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type

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H05B 3302, H05B 3322

Patent

active

041885651

ABSTRACT:
At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N.sub.2 O) gas into a sputtering gas such as nitrogen (N.sub.2) gas. Oxygen (O.sub.2) gas may be substituted for the N.sub.2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si.sub.3 N.sub.4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas. A dielectric layer is further provided for establishing high reliabiltiy high dielectric properties of the electroluminescence display panel, the dielectric layer being disposed together with the silicon-oxynitride film and being one of the group consisting of Al.sub.2 O.sub.3, SiO.sub.2, Ta.sub.2 O.sub.5, Si.sub.3 N.sub.4 and Y.sub.2 O.sub.3. The silicon-oxynitride flm which is injected by suitable ions such as P.sup.+, H.sup.+, He.sup.+, Ne.sup.+, or Ar.sup.+ may be further provided as the dielectric layer.

REFERENCES:
patent: 3037138 (1962-05-01), Motson
patent: 3806759 (1974-04-01), Kabaservice et al.
patent: 3854070 (1974-12-01), Vlasenko et al.
patent: 4024389 (1977-05-01), Kanatani et al.

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