Oxidized porous silicon field emission devices

Details Oxidized porous silicon field emission devices Oxidized porous silicon field emission devices

1994-04-12

1995-07-04

Berman, Jack I.

Radiant energy

Ion generation

Field ionization type

445 50, 445 51, H01J 37073

Patent

active

054303001

ABSTRACT:
A low voltage vacuum field emission device and method for manufacturing is provided. The devices are fabricated by anodizing a heavily doped silicon wafer substrate (12) in concentrated HF solution, forming extremely sharp silicon tips (18) at the silicon to porous silicon interface. The resulting porous silicon layer is then oxidized, and a metal film (22) is deposited by evaporation on the porous silicon. Silicon substrate (12) is the cathode, and metal film dots (22) are the anodes. The I-V characteristics for the field emission devices follow Fowler-Nordheim curves over three decades of current. The I-V characteristics are also utterly independent of temperature up to 250.degree. C. When the oxidized porous silicon layer (OPSL) is about 5000 .ANG., substantial current is obtained with less than 10 volts. Recent experiments leave no doubt that the charge transport is in the vacuum of the pores. A silicon wafer that contains an OPSL may prove to be a very useful material for the fabrication of low voltage, low noise field emitters for vacuum microelectronics.

REFERENCES:
patent: 3970887 (1976-07-01), Smith et al.
patent: 4144636 (1979-03-01), Burkhardt et al.
patent: 4252833 (1993-10-01), Kane et al.
patent: 4338164 (1982-07-01), Spohr
patent: 4380865 (1983-04-01), Frye et al.
patent: 4801380 (1989-01-01), Parker et al.
patent: 5141459 (1992-08-01), Zimmerman
patent: 5173634 (1992-12-01), Kane
patent: 5191217 (1993-03-01), Kane et al.
patent: 5203731 (1993-04-01), Zimmerman
patent: 5219310 (1979-06-01), Tomo et al.
patent: 5302238 (1994-04-01), Roe et al.
Yue, Wing Kong, et al., "Electron Field Emission in Porous Silicon", Dissertation, Submitted to the Office of Graduate Studies of Texas A & M University, Aug., 1991.
Stewart, D., et al., "Recent Developments in Broad Area Field Emission Cold Cathodes", Vacuum, vol. 30, No. 11/12, pp. 527-532, 1980.
Mitterauer, J., "Miniaturized Liquid Metal Ion Sources (MILMIS)", Paper presented at the 3rd Int. Vacuum Microelectronic Conference, Monterey, Calif., Jul. 1990.
Kirkpatrick, D., et al., "Open, Ungated Cathode Microstructures: Sources and Considerations", Paper presented at the 3rd Int. Vacuum Microelectronic Conference, Monterey, Calif., Jul. 1990.
Tsong, T., "Dynamics and stability of Field Emitter Surfaces", Paper presented at the 3rd Int. Vacuum Microelectronic Conf., Monterey, Calif., Jul. 1990.
Orvis, W. J., et al., "A Progress Report on the Livermore Miniature Vacuum Tube Project", Technical Digest 1989, IEEE IEDM (1989), pp. 529-531, Dec. 1989.
Beale, M. I. J., et al., "An Experimental and Theoretical Study of the Formation and Microstructure of Porous Silicon", Journal of Crystal Growth, vol. 73, pp. 622-636, 1985.
Noer, R. J., "Electron Field Emission From Broad-area Electrodes", J. Appl. Phys., vol. A28, pp. 1-24, 1982.
Herino, R. et al., "Microstructure of Porous Silicon and Its Evolution with Temperature", Materials Letters, vol. 2, No. 6A & B, pp. 519-523, Sep. 1984.
Arita, Yoshinobu, et al., "Thermal Behavior of Porous Silicon", Japanese Journal of Applied Physics, vol. 15, No. 9, p. 1664, Sep. 1976.

Affiliated with

Also associated with

Rating

Oxidized porous silicon field emission devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxidized porous silicon field emission devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxidized porous silicon field emission devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-762146