Oxidizable semiconductor device having cavities which allow for

Details Oxidizable semiconductor device having cavities which allow for Oxidizable semiconductor device having cavities which allow for

1999-01-22

2000-01-11

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, 257 43, H01S 319

Patent

active

060143959

ABSTRACT:
A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

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