Oxides and nitrides of metastabale group IV alloys and nitrides

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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257192, 257197, 257289, 257370, 257410, 257411, 257565, 257651, H01L 2978, H01L 2920, H01L 2702, H01L 2934

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052412148

ABSTRACT:
A process and resultant devices is described for forming MOSFET, CMOS and BICMOS devices of Group IV alloys, in particular Si.sub.x Ge.sub.1-x wherein 0<x<1, using ion beam oxidation (IBO) or ion beam nitridation (IBN) by CIMD to form insulators of the Group IV alloys.

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