Oxide wire bond insulation in semiconductor assemblies

Details Oxide wire bond insulation in semiconductor assemblies Oxide wire bond insulation in semiconductor assemblies

1997-12-23

2000-04-04

Picardat, Kevin M.

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

438106, 438121, H01L 2144, H01L 2148, H01L 2150

Patent

active

06046075&

ABSTRACT:
A semiconductor integrated circuit package is provided with insulated bonding wires. The semiconductor die is mounted to a base of either a leadframe or a grid-array package. A plurality of bonding wires are bonded between bonding pads on the semiconductor die and bonding fingers at inner ends of package conductors. The bonding wires have an oxygen-plasma oxide formed thereupon to thereby provide electrically-insulated bonding wires to prevent short-circuits between adjacent bonding wires. After wire bonding of the bonding wires, the bonding wires are subjected to an oxygen plasma to form an insulating oxide on the bonding wires to prevent short-circuits with adjacent wires. The wires are aluminum or copper with an oxygen-plasma oxide formed thereupon. An oxygen-plasma oxide is simultaneously formed on a leadframe and is removed from the outer ends of the leads by blasting with a medium.

REFERENCES:
patent: 5396104 (1995-03-01), Kimura
patent: 5639558 (1997-06-01), Tatsumi et al.
patent: 5843808 (1998-12-01), Karnezos

Affiliated with

Also associated with

Rating

Oxide wire bond insulation in semiconductor assemblies does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxide wire bond insulation in semiconductor assemblies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxide wire bond insulation in semiconductor assemblies will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-364465