Oxide thin film having quartz crystal structure

Stock material or miscellaneous articles – Composite – Of quartz or glass

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428446, 428699, 428700, 428701, 428702, B32B 900

Patent

active

058798110

ABSTRACT:
An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 .mu.m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof.

REFERENCES:
patent: 2463791 (1949-03-01), Morgan
patent: 3304200 (1967-02-01), Statham
patent: 4152679 (1979-05-01), Chen
patent: 5401573 (1995-03-01), Babel
Patent Abstracts of Japan, vol. 9, No. 254 (C-308) 11 Oct. 1985 & JP-A-60 108 325 (Nippon Denshin Denwa Kosha) 13 Jun. 1985; Abstract.
Patent Abstracts of Japan, vol. 8, No. 24 (C-208) 2 Feb. 1984 & JP-1-58 190 900 (Takashi Fujii) 7 Nov. 1983; Abstract.
Patent Abstracts of Japan, vol. 7, No. 232 (C-190) 14 Oct. 1983 & JP-A-58 125 634 (Nippon Denshin Denwa Kosha) 26 Jul. 1983; Abstract.

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