Oxide thin film for bolometer and infrared detector using...

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

10953700

ABSTRACT:
The present invention relates to an oxide thin film for a bolometer-type uncooled infrared detector having high sensitivity. An amorphous vanadium tungsten oxide (V—W—Ox), i.e. a tungsten-doped vanadium oxide, is provided as an oxide film for a bolometer application. An oxide for bolometer having characteristics of low resistance of 5 to 200 k Ω and variable TCR between −1.5 and −4.1%/° C. can be obtained by an oxidation of vanadium-tungsten metal film at a low temperature around 300° C., with changing a tungsten content and oxidation time. And a reproducible thin film can be fabricated by low price equipment for thin film deposition, without expensive ion beam or laser apparatus. Accordingly, an oxide for bolometer having characteristics of resistance lower than 100 kΩ and TCR higher than −3%/° C. can be obtained with reproducibility, whereby an uncooled-type infrared detector having high sensitivity can be fabricated.

REFERENCES:
patent: 5801383 (1998-09-01), Wada et al.
patent: 6489613 (2002-12-01), Mori et al.
patent: 6512229 (2003-01-01), Sasaki
Jin et al. “Growth abd characterization of epitaxial films of tungsten-doped vanadium oxides on sapphire (110) by reactive magnetron sputtering”, J.Vac.Sci.Technol.A 17(4), Jul./Aug. 1999.
Soltani et al. “Effects of Ti-W codoping on the optical and electrical switching of vanadium dioxide thin films grown by a reactive pulsed laser deposition”, Applied Physics Letters, vol. 85, No. 11, pp. 1958-1960, 2004.
Soltani et al. “Optical switching of vanadium dioxide thin films deposited by reactive pulsed laser deposition”, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 22, No. 3, pp. 859-864, May 2004.
Sung Moon “Novel Infrared Absorbing Material Coupled Uncooled Microbolometer”, IEEE, 2004.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Oxide thin film for bolometer and infrared detector using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxide thin film for bolometer and infrared detector using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxide thin film for bolometer and infrared detector using... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3744170

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.