Oxide thin film, electronic device substrate and electronic devi

Details Oxide thin film, electronic device substrate and electronic devi Oxide thin film, electronic device substrate and electronic devi

1995-08-17

1998-10-27

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

257310, 257314, 257410, 257411, H01L 2912, H01L 2976

Patent

active

058280804

ABSTRACT:
The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.

REFERENCES:
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