Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Josephson junction – per se or josephson junction with only...
Patent
1997-03-10
2000-01-04
King, Roy V.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Josephson junction, per se or josephson junction with only...
505238, 505702, 257 33, 257 35, H01L 3922
Patent
active
060119810
ABSTRACT:
An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.
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Badaye et al, Appl. Phys. lett. 66(16) Apr. 1995, p. 2131-2133.
Qiu et al, J. Appl. Phys. 72(5), Sep. 1992, p. 2072-2074.
Alvarez et al, Appl. Phys. lett. 69(18) Oct. 1996, p. 2743-2745.
Growth and Properties of NdBa.sub.2 Cu.sub.3 O.sub.7-.delta. /PrBa.sub.2 Cu.sub.3 O.sub.7-.delta. Quasi-Homoepitaxial Multilayers,--Gustavo A. Alvarez et al. Jpn. J. Appl. Phys. vol. 35 pp. L 1050-L 1052, Part 2, No. 8B, Aug. 15, 1996.
Alvarez Gustavo
Enomoto Youichi
Koshizuka Naoki
Tanaka Shoji
Utagawa Tadashi
International Superconductivity Technology Center
King Roy V.
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