Oxide-superconducting tunneling device formed on a submicron rec

Details Oxide-superconducting tunneling device formed on a submicron rec Oxide-superconducting tunneling device formed on a submicron rec

1991-11-13

1993-03-30

Hille, Rolf

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505701, 505702, 505776, 257 35, 257 34, 257 32, 427 62, H01B 1200, H01L 3922

Patent

active

051984130

ABSTRACT:
An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

REFERENCES:
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patent: 5057485 (1991-10-01), Nishino et al.
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"Preparation of YBa.sub.2 Cu.sub.3 O.sub.7-x Superconducting Thin Films by RF-Magnetron Sputtering", T. Aida et al., Jappanese Journal of Applied Physics, vol. 26, #9, Sep. 1987 pp. L1489-L1491.
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"Superconductivity and Related Properties of Sulphur Substituted YBa.sub.2 Cu.sub.3 O.sub.7-x ", D. N. Mattews et al., Extended Abstracts, High-Temperaure Superconductors II, Apr. 5-9, 1988, pp. 377-380.
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Japanese Journal of Applied Physics, vol. 26, No. 5, part 2, May 1987, pp. L701-L703, Tokyo *Absract*.
Ext. Abst. High Temperature Superconductors, Proceedings of Symposium S. Spring Meetings of the Materials Research Society, Anahem, 23rd-24th Apr. 1987, pp. 81-84. "Thin films and squids made from YBa.sub.2 Cu.sub.3 Oy".
Japanese Journal of Applied Physics, vol. 24, part 1, Oct. 1985, pp. 1312-1315, Tokyo, JP; Y. Okabe et al.: "Josephson junctions with short semiconductor links separated by oxidized layer"*p. 1312, paragraph 3; FIG. 1.

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