Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-02-16
1993-05-18
Hille, Rolf
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
257663, 257757, 257769, 257770, 505703, 505706, 505780, H01B 1200, H01L 2348, H01L 3900
Patent
active
052121500
ABSTRACT:
A superconducting device comprises a substrate having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material formed from a first member selected from the group of copper, gold, platinum and materials including copper, gold, and platinum as a main component and tightly attached to the superconducting material, and/or a second member selected from the group of a heat resistant metal material and its compound with the first member and the substrate material and tightly attached to the first member and the substrate.
REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch et al.
Koch et al. "Thin films and SQUIDS made from YBa.sub.2 Cu.sub.3 Oy" presented at Physical Society Meeting (video tape) Mar. 15, 1987, pp. 81-84 vol. 26 No. 4 Jap. J. Applied Phys. pp. L521-L523.
Moriwaki et al. "Josephson Junctions in La Sr CuO S/C Poly Crystalline films" (Apr. 1987).
Aida et al. "Preparation of YBa.sub.2 Cu.sub.3 O.sub.7-x Superconducting Thin Films by RF-Magnetron Sputtering" Jap. J. Appl. Phys., vol. 26 No. 9 (Sep. 1987) pp. L1489-L1491.
Sleight et al. "Superconductivity and the Metal-Semiconductor Transition" (1987) Advanced Ceramic Materials vol. 2, No. 3B Special Issue (ACerS) pp. 713-718.
Gavaler et al. "Near Surface Atomic Segregation in YBCO Thin Films" (Apr. 14, 1988), Proc. HTSC-M.sup.2, Interlaken 1988 (Physica C paper No. C262).
Hille Rolf
Saadat Mahshid
Semiconductor Energy Laboratory Co,. Ltd.
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