Oxide superconducting a transistor in crank-shaped configuration

Details Oxide superconducting a transistor in crank-shaped configuration Oxide superconducting a transistor in crank-shaped configuration

1994-04-04

1996-09-03

Crane, Sara W.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

505234, 257 38, 257 39, H01L 2348, H01L 3906, H01L 3908, H01L 3914

Patent

active

055523749

ABSTRACT:
A superconducting device comprises a thin superconducting channel formed of an oxide superconductor, a superconducting source region and a superconducting drain region formed of an oxide superconductor at the both ends of the superconducting channel which connects the superconducting source region and the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel. The length of the gate electrode ranges from one third of the length of the superconducting channel to one and a half length of the superconducting channel.

REFERENCES:
patent: 5179426 (1993-01-01), Iwamatsu
patent: 5236896 (1993-08-01), Makamura et al.
patent: 5274249 (1993-12-01), Xi et al.
"Short-Channel Field-Effect Transistor", IBM Technical Disclose Bulletin, vol. 32, No. 3A, Aug. 1989, New York, US, pp. 77-78.

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