Oxide sintered body, sputtering target, transparent...

Details Oxide sintered body, sputtering target, transparent... Oxide sintered body, sputtering target, transparent...

2006-12-26

2006-12-26

Kopec, Mark (Department: 1751)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C252S520500, C204S192290, C428S918000

Reexamination Certificate

active

07153453

ABSTRACT:
There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3powder, WO3powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m3furnace volume.

REFERENCES:
patent: 7-235219 (1995-09-01), None
patent: 2005-268113 (2005-09-01), None
patent: 2006-160535 (2006-06-01), None

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