Oxide sintered body and sputtering target, and manufacturing...

Details Oxide sintered body and sputtering target, and manufacturing... Oxide sintered body and sputtering target, and manufacturing...

2006-11-28

2006-11-28

Kopec, Mark (Department: 1751)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C204S192150, C204S192290

Reexamination Certificate

active

07141186

ABSTRACT:
An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.

REFERENCES:
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patent: 07-054132 (1995-02-01), None
patent: 09-209134 (1997-08-01), None
patent: 2003-324825 (2003-11-01), None
Mirozova et al “Physicochemical study of a saturated solid solutionb in the indium oxide (In2O3)-titanium dioixde system . . . ”, Zhurnal Prikladnoi Khimii (Russian) 65(9), 1992, 2138-40. (Abstract Only).
Campet et al “The electronic effect of titanium (4+), zircanium (4+) and germanium (4+) dopings upon the physical properties of indium (III) oxide . . . ”, Mat. Sci and Eng, B B19(3), 285-9 (1993). (Abstract Only).
Japan Society for the Promotion of Science Committee No. 166. On Transparent Oxide Optical and Electrical Materials. Technology OF Transparent Conducting Films. 1999.
John L. Vossen. RF Sputtered Transparent Conductors The System In2O3-SnO2- RCA Review, vol. 32 Jun. 1971 pp. 289-296.

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