Compositions – Electrically conductive or emissive compositions – Metal compound containing
Reexamination Certificate
2009-09-16
2011-12-20
McGinty, Douglas (Department: 1765)
Compositions
Electrically conductive or emissive compositions
Metal compound containing
C252S519100, C501S126000, C423S624000, C204S192290, C430S530000, C430S063000, C430S527000, C430S496000, C430S041000, C430S220000, C428S432000, C428S426000, C428S698000, C428S701000, C428S702000
Reexamination Certificate
active
08080182
ABSTRACT:
The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.
REFERENCES:
patent: 5407602 (1995-04-01), Cava
patent: 5473456 (1995-12-01), Cava et al.
patent: 5538767 (1996-07-01), Cava et al.
patent: 6284393 (2001-09-01), Hosokawa et al.
patent: 6537667 (2003-03-01), Watanabe et al.
patent: 6669830 (2003-12-01), Inoue et al.
patent: 6911163 (2005-06-01), Abe
patent: 7476343 (2009-01-01), Nakayama et al.
patent: 7507357 (2009-03-01), Abe et al.
patent: 7563514 (2009-07-01), Nakayama et al.
patent: 7611646 (2009-11-01), Nakayama et al.
patent: 2004/0137280 (2004-07-01), Abe et al.
patent: 2007/0051926 (2007-03-01), Nakayama et al.
patent: 2007/0200100 (2007-08-01), Nakayama et al.
patent: 2008/0032106 (2008-02-01), Nakayama et al.
patent: 2008/0038529 (2008-02-01), Nakayama et al.
patent: 2009/0123724 (2009-05-01), Nakayama et al.
patent: 2010/0129660 (2010-05-01), Nakayama et al.
patent: 51-56998 (1976-05-01), None
patent: 51056998 (1976-05-01), None
patent: 07-182924 (1995-07-01), None
patent: 08-264023 (1996-10-01), None
patent: 09-259640 (1997-10-01), None
patent: 10-083719 (1998-03-01), None
patent: 10-294182 (1998-11-01), None
patent: 2002-093243 (2002-03-01), None
patent: 2002-313141 (2002-10-01), None
patent: WO 2005083722 (2005-09-01), None
patent: 2006022373 (2006-01-01), None
patent: WO 2006030762 (2006-03-01), None
Mukai et al., “White and UV LEDs”, Applied Physics, vol. 68, No. 2, Feb. 1999, pp. 152-155, The Japan Society of Applied Physics.
Akita et al., “Effects of GaN Substrates on ultraviolet Light Emitting Diodes”, SEI Technical Reviews, No. 165, Sep. 2004, pp. 75-80, Sumitomo Electric Industries Ltd. (partial translation).
T. Minami et al., J. Vac. Sci, A14(3), May/Jun. 1996, pp. 1689-1693.
T. Minami et al., J. Vac. Sci, A17(4), Jul./Aug. 1999, pp. 1765-1772.
“Transparent Conducting Thin Films of GalnO3”, Julia M. Philips et al., Applied Physics Letters, vol. 65, Nos. 1-4, pp. 115-117, 1994.
U.S. Appl. No. 12/314,238, filed Dec. 5, 2008 for “GA-IN-O Amorphous Oxide Transparent Conductive Film, and Transparent Conductive Base Material Comprising This Conductive Film Formed Thereon ”.
Hiroshi Kimura, et al., DC Magnetron Sputtered ITO Films Applied with Indium Tin Oxide Targets, Electronic Materials Research Laboratory, Mitsui Mining and Smelting Co., Japan, Nov. 10, 2006.
Yue Long Li, et al., Indium Zinc Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering for Fabrication of Flexible Dye Sensitized Solar Cell, Applied Chemistry, vol. 11, No. 2, Nov. 2007, pp. 606-609.
Xifeng Li, et al., Development of Novel Tungsten-doped High Mobility Transparent Conductive In2O3 Thin Films, Journal of Vacuum Science and Technology, A 24(5), Sep./Oct. 2006.
Abe Yoshiyuki
Nakayama Tokuyuki
McGinty Douglas
Smith , Gambrell & Russell, LLP
Sumitomo Metal & Mining Co., Ltd.
LandOfFree
Oxide sintered body and an oxide film obtained by using it,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Oxide sintered body and an oxide film obtained by using it,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxide sintered body and an oxide film obtained by using it,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4259284