Oxide removal from metallic contact bumps formed on semiconducto

Details Oxide removal from metallic contact bumps formed on semiconducto Oxide removal from metallic contact bumps formed on semiconducto

1987-09-24

1989-09-12

Godici, Nicholas P.

Metal fusion bonding

Process

Using only pressure

228205, 2281802, B23K 2014, B23K 2024

Patent

active

048652458

ABSTRACT:
A method is disclosed for joining two semiconductor devices 10 and 10', each having a plurality of metallic contact bumps 12 and 12' on the major surfaces 14 and 14' thereof. The devices are etched to remove oxide 18 from the contact bumps and to prevent subsequent oxidation thereon. The devices are then oriented so that the bumps 12 and 12' on the respective devices are aligned opposite each other. By applying pressure to the devices, the bumps are caused to cold-weld together to form a single device 24.

REFERENCES:
patent: 4245768 (1981-01-01), Sater
patent: 4379218 (1983-04-01), Grebe et al.
patent: 4573627 (1986-03-01), Miller et al.

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