Oxide-isolated integrated Schottky logic

Details Oxide-isolated integrated Schottky logic Oxide-isolated integrated Schottky logic

1980-10-27

1987-04-07

Larkins, William D.

357 15, H01L 2704

Patent

active

046564985

ABSTRACT:
A logic unit used as the basic building block in a bipolar integrated circuit is formed in a rectangular oxide-isolated island wherein thick oxide walls at one end of the island define three of four edges of a P-type region which serves both as the base of an NPN drive transistor and the emitter of a PNP clamp transistor. An input contact to the logic unit is disposed on the upper semiconductor surface of the island in ohmic contact with the common P-type region. The input contact extends across the entire width of the island to minimize the base resistance of the drive transistor and thus increase the switching speed of the logic unit.

REFERENCES:
patent: 3783047 (1974-01-01), Paffen et al.
patent: 4048517 (1977-09-01), Rathbone et al.
patent: 4107835 (1978-08-01), Bindell et al.
Lohstroh, IEEE J. Solid State Circuits, vol. SC 14, No. 3, pp. 585-590 (Jun. 1979).

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