Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – With melting
Reexamination Certificate
2006-03-07
2006-03-07
Kopec, Mark (Department: 1751)
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
With melting
C505S729000
Reexamination Certificate
active
07008906
ABSTRACT:
The present invention relates to a defect-free oxide high-critical temperature superconductor acicular crystal, that is, an oxide high-critical temperature superconductor acicular crystal that is substantially a perfect crystal and also relates to a method for producing the same, wherein such a crystal is essential for achieving superconducting electronic devices. The oxide high-critical temperature superconductor acicular crystal of the present invention includes an acicular crystal having a Bi2Sr2Ca2Cu3O10(Bi-2223) crystal structure and is grown from a powder compact by heat-treating the powder compact in an oxygen atmosphere, wherein the powder compact contains an oxide having the Bi-2223 crystal structure and TeO2, CaO, or (SrCa)3TeO6. The achievement of the acicular crystal having the Bi-2223 crystal structure contributes to the development of superconducting electronic devices that have been theoretically proposed but have not been achieved.
REFERENCES:
patent: 4-65395 (1992-03-01), None
patent: 11-92143 (1999-04-01), None
Nagao et al “Growth and Superconducting Properties of Bi2Sr2CaCu2O8 single-ctystal whiskers using tellurium-doped precursors”, Applied Physics Letters (2001), 79(16), 2612-14 (Abstract Only).
Ichiro Matsubara et al., Growth of superconducting whiskers in the Bi system. Journal of Crystal Growth, Mar. 1, 1993, vol. 128, Nos. 1 to 4, part 2, pp. 719 to 724 abstract; p. 722, right column, line 11 to p. 724, left column, line 16.
Ichiro Matsubara et al., Preparation and critical current density of Bi2Sr2Ca2Cu3O10+x supperconducting whiskers, Applied Physics Letters. Dec. 3, 1990, vol. 57, No. 23, pp. 2490 to 2491 abstract; p. 2490, left column, lines 26 to 41.
Kim Sangjae
Maeda Hiroshi
Nagao Masanori
Sato Mitsunori
Yamashita Tsutomu
Japan Science and Technology Agency
Kopec Mark
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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