Oxide garnet single crystal

Details Oxide garnet single crystal Oxide garnet single crystal

1992-11-10

1994-01-11

Tucker, Philip

Compositions

Light transmission modifying compositions

Inorganic crystalline solid

423594, 359280, G02B 520, C01G 4900

Patent

active

052778452

ABSTRACT:
A novel oxide garnet single crystal, which can be epitaxially grown on a rare earth-gallium garnet wafer and exhibiting excellent performance as a material of magneto-optical devices, is disclosed. The oxide garnet single crystal, grown on the substrate surface by the liquid-phase epitaxial method, has a chemical composition expressed by the formula

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Patent Abstracts of Japan, vol. 12, No. 176, May 25, 1988 and JP A 62 283 821 (Tohoku Metal Ind. Ltd.) Dec. 9, 1987.
Patent Abstracts of Japan, vol. 12, No. 433, Nov. 15, 1988 and JP A 63 159 225 (Tokin Corp.) Jul. 2, 1988.

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