Oxide garnet single crystal

Details Oxide garnet single crystal Oxide garnet single crystal

1995-06-28

1997-04-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 60, 117945, C30B 2928

Patent

active

056161760

ABSTRACT:
A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide garnet single crystal wafer and having a chemical composition represented by the general formula

REFERENCES:
patent: 4563236 (1986-01-01), Ross et al.
patent: 4698820 (1987-10-01), Brandle et al.
patent: 4810325 (1989-03-01), Licht
Patent Abstracts of Japan vol. 14, No. 269 (P-1059) Jun. 11, 1990 & JP A-02 077 719 Mar. 16, 1990 Mitsubishi Gas Chem Co., Inc.
Patent Abstracts of Japan, vol. 15, No. 202 (C-834) May 23, 1991 & JP A-03 054198 (Shin-Etsu Chemical Co., Ltd.).
Patent Abstracts of Japan, vol. 15, No. 34 (C-799) Jan. 28, 1991 & JP A-02 271 997 (Shin-Etsu Chemical Co., Ltd.) Nov. 6, 1990.

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