Oxide etching process using nitrogen plasma

Details Oxide etching process using nitrogen plasma Oxide etching process using nitrogen plasma

1996-09-11

1999-11-23

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438695, 438714, 438637, H01L 213065, H01L 21311

Patent

active

059900180

ABSTRACT:
The present invention is a method for improviding an oxide etching process by using a nitrogen-based plasma. An additional nitrogen-based plasma step is used to inhibit or delay the formation of observed residual bubbles during a dry etching process. The method comprises the steps of etching the oxide layer by reactive ion etching and immersing the oxide layer in a nitrogen plasma.

REFERENCES:
patent: 5091326 (1992-02-01), Haskell
patent: 5643407 (1997-07-01), Chang

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