Oxide etch and method of etching

Details Oxide etch and method of etching Oxide etch and method of etching

1997-11-25

2000-05-16

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216101, 216109, 252 793, 438748, H01L 2100

Patent

active

060637129

ABSTRACT:
An oxide etchant and method of etching are provided. The etchant includes at least one fluorine-containing compound and at least one auxiliary component selected from the group of a boron-containing compound and a phosphorus-containing compound.

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R, Merrill, "Ion Chromatograhic Determination of Boron and Phosphorus in Chemically Vapor-Deposited Borophosphosilicate Glass (BPSG) Films", LC GC, 6, 374, 416-419 (1988).
R. E. Mesmer et al., "Fluoroborate Equilibria in Aqueous Solutions", Inorganic Chemistry, 12, 89-95 (1973).
J. Tong et al., "Process and Film Characterization of PECVD Borophosphosilicate Films for VLSI Applications", Solid State Technology, 161-170 (1984).
C. Wamser, "Hydrolysis of Fluoboric Acid in Aqueous Solution", J. Amer. Chem. Soc. 70, 1209-1215 (1948).
Material Safety Data, "Super Q Etch", Olin MSDS Control Group, 11 pgs., (Sep. 1998).
Material Safety Data, "Q Etch II", Olin MSDS Control Group, 11 pgs., (Sep. 1998).

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