Oxide buffer layer for improved magnetic tunnel junctions

Details Oxide buffer layer for improved magnetic tunnel junctions Oxide buffer layer for improved magnetic tunnel junctions

2005-03-22

2005-03-22

Bernatz, Kevin M. (Department: 1773)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200, C428S611000, C428S632000, C428S678000, C428S336000, C428S692100, C428S702000

Reexamination Certificate

active

06870714

ABSTRACT:
A metal manganese oxide buffer layer is used to seed a barrier layer in a magnetic tunnel junction memory element having pinned and free magnetic layers. An alumina tunnel barrier layer is formed on the oxidized metal manganese layer with the barrier layer and oxidized metal manganese layer being between the pinned or free ferromagnetic layers.

REFERENCES:
patent: 6638774 (2003-10-01), Raberg
patent: 20020054461 (2002-05-01), Fujiwara et al.
patent: 20040042246 (2004-03-01), Drewes et al.

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