Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1998-07-02
2000-10-03
Everhart, Caridad
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 46, 257188, H01L 2100
Patent
active
061272027
ABSTRACT:
A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.
REFERENCES:
patent: 4581108 (1986-04-01), Kapur et al.
patent: 4798660 (1989-01-01), Ermer et al.
patent: 5028274 (1991-07-01), Basol et al.
patent: 5445847 (1995-08-01), Wada et al.
patent: 5728231 (1998-03-01), Negami et al.
patent: 5871630 (1999-02-01), Bhattacharya et al.
patent: 5985691 (1999-11-01), Basol et al.
Bloss et al., "Thin Film Solar Cells", Progress in Photovoltaics, vol. 3, pp. 3-24, 1995.
T. Arita et al., "20th IEEE PV Specialists Conference", 1988, pp. 1650-1655.
Vervaet et al., "9th European Communities PV Solar Energy Conference", 1989, p. 480-83.
Casteleyn et al., "12th European PV Solar Energy Conference", 1994, pp. 604-607.
S. Weng and M. Cocivera, "Journal of Applied Physics," vol. 74, pp. 2046-2052, 1993.
M.E. Beck and M. Cocivera, "Thin Solid Films", vol. 272, pp. 71-82, 1996.
Final Technical Report, "Deposition of Copper Indium Diselenide Films by Low-Cost Techniques" Feb., 1987 (by Poly Solar Inc. under SERI subcontract XL-4-03125-1).
Basol Bulent M.
Kapur Vijay K.
Leidholm Craig R.
Roe Robert A.
Everhart Caridad
International Solar Electronic Technology, Inc.
Lee Granvill D.
LandOfFree
Oxide-based method of making compound semiconductor films and ma does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Oxide-based method of making compound semiconductor films and ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxide-based method of making compound semiconductor films and ma will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-194516