Oxidative conditioning compositions for metal oxide layer...

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Reexamination Certificate

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C428S471000, C428S472000, C428S689000, C428S697000, C428S699000, C428S701000, C428S702000, C428S704000

Reexamination Certificate

active

06887579

ABSTRACT:
A metal oxide layer may made more highly oxidized by exposing the layer to sulfur trioxide. The leakage current of the layer may thereby be decreased, providing a capacitor containing such a layer with improved performance properties. The capacitor may be incorporated into a dynamic random access memory cell or other structure useful in the semiconductor or other industry.

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