Oxidation simulation method

Details Oxidation simulation method Oxidation simulation method

1997-01-16

1998-12-08

Teska, Kevin J.

Boots, shoes, and leggings

36446828, 364488, G06F 1750

Patent

active

058479732

ABSTRACT:
High-speed simulation of oxidation is performed even when an overlap occurs between oxide-film shapes. A sweeping quadrilateral is defined accompanying the growth of an oxide film from a line segment composing the surface of the oxide film before the growth, the line segment on the surface of an oxide film after the growth and the dislocation vectors of both ends in these segments. The overlap width of the oxide-film shapes is then acquired by a predetermined figure calculation of these sweeping quadrilaterals between them. A linear estimation is made on the time axis when an overlap between the oxide-film shapes occurs. The growth time of the oxide film is retrogressed so that the overlap width of said oxide-film shapes decreases below a previously specified allowable value. Thereafter, the oxidation simulation is continued with this state made into a renewed initial state.

REFERENCES:
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patent: 5379225 (1995-01-01), Tazawa et al.
patent: 5495417 (1996-02-01), Fuduka et al.
patent: 5677846 (1997-10-01), Kumashiro
E. Rank and U. Weinert, "A Simultion System for Diffusive Oxidation of Silicon: A Two-Dimensional Finite Element Approach", IEEE Transactions on Computer-Aided Design, vol. 9, No. 5, May 1990, pp. 543-550.
Sahul, Z.H. et al., "Grid Evolution for Oxidation Simulation Using a Quadtree Based Grid Generator", Nupad V Digest, Jun. 1994 IEEE, pp. 155-158.

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