Oxidation of silicon wafers to eliminate white ribbon

Details Oxidation of silicon wafers to eliminate white ribbon Oxidation of silicon wafers to eliminate white ribbon

1978-12-18

1983-08-30

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 94, H01L 21316

Patent

active

044016913

ABSTRACT:
Disclosed is a process for eliminating the migration of nitrogen or nitrogen hydrides (e.g., NH.sub.3) to a Si-SiO.sub.2 interface site during silicon-nitride-masked oxidation--using an HCl additive to a pyrogenic oxidizing medium to react with the nitrogenous entity and so prevent formation of silicon nitride at this site [e.g., in a die zone intended for later reception of a precise oxide layer]--this improved technique resulting in increased yield, improved reliability and better electrical parameters.

REFERENCES:
patent: 3900350 (1975-08-01), Appels
patent: 3913211 (1975-10-01), Seeds et al.
patent: 4098924 (1978-04-01), McLouski
patent: 4109030 (1978-08-01), Briska
patent: 4139658 (1979-02-01), Cohen
Kooi, "Formation . . . in NH, Gas", J. Electrochemical Society, vol. 123, No. 7, pp. 1117-1120 (1976).

Affiliated with

Also associated with

Rating

Oxidation of silicon wafers to eliminate white ribbon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxidation of silicon wafers to eliminate white ribbon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxidation of silicon wafers to eliminate white ribbon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-905904