Oxidation of silicon nitride in semiconductor devices

Details Oxidation of silicon nitride in semiconductor devices Oxidation of silicon nitride in semiconductor devices

1993-04-27

1995-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437 52, 437920, 437978, 437241, H01L 2102

Patent

active

054341094

ABSTRACT:
A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600.degree. C. is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF.sub.3 is the fluorine-containing compound, and a temperature greater than about 700.degree. C. at a concentration of between about 100 to 1000 ppm is used.

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Cable et. al., "Improvements in Rapid Thermal Oxide/Re-oxidized Nitrided Oxide (ONO) Films Using NF.sub.3 "; Mat. Res. Soc. Symp. Proc. vol. 224, pp. 403-408; 1991.
Kouvatsos et al., "Silicon-fluorine bonding and fluorine profiling in SiO.sub.2 films grown by NF.sub.3 -enhanced oxidation", Appl. Phys. Lett. 61 (7), pp. 780-782, Aug. 17, 1992.

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