Oxidation barrier composed of a silicide alloy for a thin film a

Details Oxidation barrier composed of a silicide alloy for a thin film a Oxidation barrier composed of a silicide alloy for a thin film a

1998-12-14

2000-05-16

Abraham, Fetsum

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438433, 438473, 438580, 438581, 438582, 438583, 438595, 438767, 438768, 438783, 438785, G02F 117

Patent

active

060636920

ABSTRACT:
A method of fabricating an oxidation barrier for a thin film is provided. The method may include forming a thin film (10) outwardly from a semiconductor substrate (12) and separated from the semiconductor substrate (12) by a primary insulator layer (14). A reactive layer (16) may be formed in-situ adjacent to the thin film (10). An oxidation barrier (20) may be formed by a chemical reaction between the thin film (10) and the reactive layer (16). The oxidation barrier (20) may comprise a silicide alloy that operates to reduce oxidation of the thin film (10).

REFERENCES:
patent: 4433901 (1984-02-01), Takahashi et al.
patent: 5286336 (1994-02-01), Chan et al.

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