Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Patent
1999-01-29
2000-12-19
Callahan, Timothy P.
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
327427, 327389, 326113, H03K 17687, H03K 1716
Patent
active
06163199&
ABSTRACT:
A transfer gate or pass gate circuit for transferring logic signals between nodes for a range of available high-potential supply levels. The primary transfer gate is designed to protect against potentials that either exceed either a high-potential or a low-potential level or that undershoot such potential levels. For overshoot (overvoltage) tolerance, this is achieved by coupling a NMOS transistor in parallel with a pair of PMOS transistors that are coupled in series. All three transistors are located between two nodes, either of which can be the input or the output of the transfer gate. The NMOS transistor is designed to be larger than the PMOS transistors and carries most of the transfer capability. The smaller PMOS transistors are designed to eliminate potential drops that would otherwise occur with a single NMOS transistor or with a complementary pair of transistors. For undershoot (undervoltage) tolerance, a PMOS transistor is coupled in parallel with a pair of NMOS transistors that are coupled in series.
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Davis Jeffrey B.
Miske Myron
Callahan Timothy P.
Caseiro Chris A.
Englund Terry L.
Fairchild Semiconductor Corp.
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