Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2006-10-31
2006-10-31
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C257S355000
Reexamination Certificate
active
07129144
ABSTRACT:
An overvoltage protection device has a voltage-limiting region parallel to its central junction to produce a transverse junction breakdown. The spacing between the voltage-limiting region and the central junction defines the breakdown voltage. Via varying the size and location of the voltage-limiting region, the protection device can has various-breakdown voltages and lower breakover currents. Thereby, the sensitivity of the protection device can be improved.
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patent: 6372590 (2002-04-01), Nayak et al.
Birch, Stewart,Kolasch & Birch LLP
Lite-On Semiconductor Corp.
Vu David
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