Overvoltage protection device

Details Overvoltage protection device Overvoltage protection device

1998-08-21

2001-03-20

Saadat, Mahshid (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S355000, C257S546000, C257S665000, C257S173000

Reexamination Certificate

active

06204549

ABSTRACT:

FIELD OF INVENTION
This invention relates to an overvoltage protection device.
BACKGROUND OF INVENTION
Overvoltage protection devices are available in two basic varieties, namely semiconductor devices, particularly Zener diodes and varistors, and gas discharge devices. Such overvoltage protection devices are known from “Transient Voltage Suppression Devices”, Harris Semiconductor, Harris Corporation, 1990, particularly Chapter II. Different properties of different semiconductor devices and a gas discharge device are described. The semiconductor devices have is the disadvantage of a high leakage current, which results in a permanent power loss. A low breakdown voltage is difficult to implement and leads to a high leakage current. The semiconductor devices also have a relatively high depletion-layer capacitance, which results in a relatively long response time. Gas discharge devices have more favorable leakage current characteristics and, thus, a lower power loss. However, they cannot be used as low-voltage protection devices, since they can only provide overvoltage protection well above 100 V. Furthermore, gas discharge devices have a wide tolerance with respect to their rated voltage. Semiconductor devices have the disadvantage of requiring a large amount of chip area. Gas discharge devices are not suitable for integration.
The object of the invention is to provide an overvoltage protection device and a process of fabricating an overvoltage protection device which has a low leakage current and, thus, a low power loss, a short response time, and a low breakdown voltage, so that it is suitable for use as a low-voltage protection device.
SUMMARY OF INVENTION
An overvoltage protection device including a substrate (
1
) with a first electrode layer (
2
) deposited thereon, over which extends a second electrode layer (
3
) which is separated from the first electrode layer (
2
) by a distance d determined by the thickness of a spacing layer (
4
), the spacing layer (
4
) having an opening (
5
) which forms a cavity (
6
) between the electrode layers (
2
,
3
).
And, a method for fabricating the same, the method including the steps of depositing on a substrate a first electrode layer (
2
), a spacing layer (
4
), and a second electrode layer (
3
) one on top of the other, the spacing layer (
4
) being provided with at least one opening (
5
) which forms a cavity (
6
) between the electrode layers (
2
,
3
).


REFERENCES:
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patent: 4421256 (1995-01-01), None
patent: 0525763 (1993-02-01), None
“Transient Voltage Suppression Devices”, Harris Semiconductor, Harris Corporation, Chapter 2, pp. 2-1 thru 2-12, 1990.
Bock, et al., “New Field-Emitter Switch for ESD Protection of Microwave Circuits”, Electronics Letters, vol. 28, No. 19, pp. 1822-1824, Sep. 10, 1992.
S. Iannazzo, “A Survey of the Present Status of Vacuum Microelectronics”, Solid State Electronics, vol. 36, No. 3, pp. 301-320, 1993.
Copy of German Search Report for 197 36 751.2, dated May 20, 1998.

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