Overvoltage-protected light-emitting semiconductor device

Details Overvoltage-protected light-emitting semiconductor device Overvoltage-protected light-emitting semiconductor device

2006-01-31

2008-11-11

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S184000, C257SE33016

Reexamination Certificate

active

07449727

ABSTRACT:
An LED incorporating an overvoltage protector with a minimum of space requirement. The LED itself comprises a p-type semiconductor substrate, a light-generating semiconductor region grown epitaxially thereon, a first electrode on the light-generating semiconductor region, and a second electrode on the underside of the substrate. The standard method of LED fabrication is such that the substrate is notionally divisible into a main portion in register with the overlying light-generating semiconductor region and, surrounding the main portion, a tubular marginal portion needed for dicing the wafer into individual squares or dice. The overvoltage protector comprises an n-type semiconductor film formed on the marginal portion of the substrate and held against the side surfaces of the light-generating semiconductor region via an insulating film. Creating a pn junction with the marginal portion of the p-type substrate, the n-type semiconductor film provides an overvoltage protector diode which is electrically connected reversely in parallel with the LED. Various other embodiments are disclosed.

REFERENCES:
patent: 2002/0179914 (2002-12-01), Sheu
patent: 2005/0168899 (2005-08-01), Sato et al.
patent: 10-065215 (1998-03-01), None
patent: 10-200159 (1998-07-01), None

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