Electricity: electrical systems and devices – Safety and protection of systems and devices – Circuit interruption by thermal sensing
Patent
1986-07-16
1988-03-08
Pellinen, A. D.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Circuit interruption by thermal sensing
357 28, 374178, 323907, 323245, 307310, 307491, H02H 504
Patent
active
047302283
ABSTRACT:
The temperature of the power semiconductor component is sensed by a bipolar transistor. The bipolar transistor is in series with a depletion mode MOSFET whose gate and source electrodes are connected together. The drain electrode is also connected to a threshold element. Normally, the FET has low impedance, so that at the input of the threshold element source potential, e.g. ground potential, is present. With current rising as a function of temperature, the current through the FET is limited to a constant, essentially temperature-independent value, and the potential at the input of the threshold element rises steeply. This condition is detected as an overtemperature signal.
REFERENCES:
patent: 4028564 (1977-06-01), Streit et al.
patent: 4329701 (1982-05-01), Brenneman
patent: 4331888 (1982-05-01), Yamauchi
patent: 4417263 (1983-11-01), Matsuura
patent: 4546373 (1985-10-01), Todd et al.
patent: 4602207 (1986-07-01), Kim et al.
patent: 4639755 (1987-01-01), Masayaki et al.
patent: 4652144 (1987-03-01), Gunther et al.
Schade, Jr., RCA Technical Notes, "Thermal Shutdown Circuitry", 3/1981, T.N. No. 1270.
Einzinger Josef
Fellinger Christine
Leipold Ludwig
Tihanyi Jenoe
Weber Roland
Edelman Lawrence C.
Pellinen A. D.
Siemens Aktiengesellschaft
Williams Howard L.
LandOfFree
Overtemperature detection of power semiconductor components does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Overtemperature detection of power semiconductor components, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Overtemperature detection of power semiconductor components will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-233452