Overlying shifter type phase shift photomask blank, overlying sh

Details Overlying shifter type phase shift photomask blank, overlying sh Overlying shifter type phase shift photomask blank, overlying sh

1995-03-16

1996-11-19

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, 430322, 430394, G03F 900

Patent

active

055761232

ABSTRACT:
An overlying shifter type phase shift photomask used to produce semiconductor integrated circuits of high integration density, e.g. VLSI, ULSI, etc., which is capable of transferring fine-line patterns to a wafer by projection exposure. The photomask is produced by forming at least a light-blocking layer pattern or a combination of a light-blocking layer pattern and an etching stopper layer for a shifter layer on a transparent substrate, forming a shifter layer over the whole surface of the substrate, and then patterning the shifter layer to form a shifter layer pattern. The production method includes the step of polishing away unevenness on the surface of the shifter layer caused by a step which is produced by the light-blocking layer pattern, thereby leveling the surface of the shifter layer.

REFERENCES:
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5380608 (1995-01-01), Miyoshita et al.

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