Overlay target for polarized light lithography

Details Overlay target for polarized light lithography Overlay target for polarized light lithography

2009-05-21

2010-10-05

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000

Reexamination Certificate

active

07807320

ABSTRACT:
A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.

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Brunner, T.A., “Impact of Lens Aberrations on Optical Lithography”, IBM Journal of Research and Development, 1997, 14 pages, vol. 41, Nos. ½, http:/researchweb.watson.ibm.com/journal/rd/411/brunner.html, downloaded Aug. 30, 2005.

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