Overlay metallization field effect transistor

Details Overlay metallization field effect transistor Overlay metallization field effect transistor

1976-04-12

1977-04-12

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 15, 427 84, B01J 1700

Patent

active

040166430

ABSTRACT:
A high-frequency, high-power FET constructed upon a planar substrate with a repeated pattern of gate, source, and drain connections wherein any two are connected with metallization layers adjacent to and separated from the semiconductor substrate. The third element is interconnected with an overlay metallization layer separated from the lower two metallization layers by an insulating dielectric. The overlay layer is preferably grounded for minimum feedback capacitance.

REFERENCES:
patent: 3657615 (1972-04-01), Driver
patent: 3763408 (1973-10-01), Kano
patent: 3969745 (1976-07-01), Blocker

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