Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Patent
1997-02-26
1999-03-02
Dutton, Brian
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
438401, 355 53, H01L 2166, H01L 2176, G01R 3126, G03B 2742
Patent
active
058770364
ABSTRACT:
In a method of manufacturing a semiconductor integrated circuit device, a resist pattern is formed on a lower layer pattern of a semiconductor substrate using a mask. An image signal along a line extending on the lower layer pattern and the resist pattern is generated by an optical system. Based on the image signal, a center position of the resist pattern and a center position of the lower layer pattern are calculated using correlation calculation and an overlay error of the resist pattern to the lower layer pattern is determined. When the overlay error falls within a predetermined range, a next manufacturing process such as an etching process and an ion implantation process to the semiconductor substrate is executed. When the overlay error does not fall within a predetermined range, the resist pattern is removed, and a relative position between the semiconductor substrate and the mask is adjusted. Thereafter, the above steps are repeated.
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Dutton Brian
NEC Corporation
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