Overlay alignment measurement of wafers

Details Overlay alignment measurement of wafers Overlay alignment measurement of wafers

1998-12-07

2000-06-27

Larkin, Daniel S.

Measuring and testing

Surface and cutting edge testing

Roughness

250306, 250307, G01B 528, G01B 734

Patent

active

060792566

ABSTRACT:
The present invention is a method and apparatus that uses a microscopic height variation positioned relative to a semiconductor device to scan a target on the device to produce an electrical signal representative of height variations of first and second periodic structures of the target in a selected path across the device, and a computing and control system to provide translation between the microscopic height variation detector and the target on the device in a selected path, and to calculate any offset between the first periodic structure and the second periodic structure of the target from the electrical signals from the microscopic height variation detector. The first periodic structure of the target is on a first layer of the device, and the second periodic structure, that complements the first periodic structure, is on a second layer of the device at a location that is adjacent the first periodic structure.

REFERENCES:
patent: 3505861 (1970-04-01), Schoefer et al.
patent: 4480916 (1984-11-01), Bareket et al.
patent: 5533387 (1996-07-01), Aihara et al.
patent: 5633455 (1997-05-01), Quate
Modern Optical Engineering, The Design of Optical Systems, Warren J. Smith, (1990) 2nd Ed., pp. 151-154.
Handbook of Critical Dimension Metrology and Process Control, Kevin M. Monahan, editor, (1994) vol. CR52, pp. 160-188.

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