Overlay accuracy measurement mark

Details Overlay accuracy measurement mark Overlay accuracy measurement mark

1999-07-01

2000-05-16

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430 5, 438975, G03F 900

Patent

active

060635290

ABSTRACT:
Disclosed is an overlay accuracy measurement mark used in measuring an overlay accuracy between any two selected device patterns in a semiconductor device having two or more multi-patterns. The mark is applied to a semiconductor device comprising a first pattern which is first formed, and second patterns consisting of at least one or more target patterns for alignment with the first pattern, which are formed after the formation of the first pattern. The mark includes a first overlay measurement pattern consisting of a plurality of unit measurement marks, each having a tetragonal through hole in its central portion, the unit measurement marks being spaced by a selected distance from each other; and a second overlay measurement pattern of a box-shape mark formed within the through of the innermost unit measurement mark of the unit measurement marks, wherein each unit measurement mark of the first and second overlay measurement patterns respectively corresponds to the first and second patterns of the semiconductor device.

REFERENCES:
patent: 5498500 (1996-03-01), Bae
patent: 5665495 (1997-09-01), Hwang

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