Overlapping boundary electron exposure system method and apparat

Details Overlapping boundary electron exposure system method and apparat Overlapping boundary electron exposure system method and apparat

1977-11-01

1979-01-02

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250492B, A61K 2702

Patent

active

041328981

ABSTRACT:
An electron beam exposure apparatus and method for use in fabricating semiconductor devices. A chip pattern larger in area than the electron beam scan field is divided into and exposed in a number of smaller parts (called partitions). The work piece on which the chip pattern is to be formed is moved relative to the scan field to enable each partition to be individually scanned at a different work piece position. The scan field, with the work piece positioned to scan one partition, overlaps onto and establishes a boundary region on an adjacent partition. Portions of chip patterns which lie in a boundary region are selectively scanned in connection with one or another of the abutting partitions. Portions of chip patterns falling in the boundary regions are selected for scanning in one or the other of adjacent partitions so as to minimize the number of divisions and so as to avoid dividing the pattern along critical dimensions.

REFERENCES:
patent: 3875416 (1975-04-01), Spicer
patent: 3900737 (1975-08-01), Collier et al.

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