Overheating detection circuit for detecting overheating of a pow

Details Overheating detection circuit for detecting overheating of a pow Overheating detection circuit for detecting overheating of a pow

1991-11-21

1994-10-11

Swann, Glen

Communications: electrical

Condition responsive indicating system

Specific condition

307310, 340598, 361103, 374152, 374178, G08B 1706

Patent

active

053551230

ABSTRACT:
An arrangement for detecting overheating of a power integrated circuit includes a power device integrated in a semiconductor substrate and an overheating detection circuit. The overheating detection circuit includes a reverse biased pn junction formed in the same semiconductor substrate as the power device and having a reverse leakage current flow which is temperature dependent, and a voltage converter formed in the same semiconductor substrate as the power device and coupled to the pn junction for producing a voltage depending on the reverse leakage current flow. A threshold circuit is connected for receiving the voltage and producing a signal when the voltage exceeds a threshold voltage to indicate that the power device is overheated.

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patent: 4854731 (1989-08-01), Jenkins
patent: 4924212 (1990-05-01), Fruhauf et al.
E. Habekotte', "Silicon Temperature Sensors," Bull. ASE/UCS 76 (1985) 5, 9 mars, pp. 272-276.
O. H. Schade, "Thermal Shutdown Circuitry," RCA Technical Notes, No. 1270, Mar. 2, 1981, pp. 1-3.
D. M. Embree, "Thermal Shutdown Circuit," Technical Digest--Western Electric, No. 72, Oct. 1983, pp. 15-16.
J. Proctor, Temperature Transducer IC is Linear Over Wide Range, Electric Design, Apr. 5, 1984, pp. 133-140.

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