Overhanging separator for self-defining stacked capacitor

Details Overhanging separator for self-defining stacked capacitor Overhanging separator for self-defining stacked capacitor

1998-06-23

2001-07-31

Meier, Stephen D. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S005000

Reexamination Certificate

active

06268259

ABSTRACT:

FIELD OF THE INVENTION
This invention is directed to semiconductor films and the manufacture of the same, more particularly to a self-defining discontinuous film, and most particularly to a capacitor employing a self-defining bottom electrode.
BACKGROUND OF THE INVENTION
Stacked capacitor structures using high-dielectric materials such as (Ba,Sr)TiO
3
(BST) require noble metal electrodes, such as platinum, which are very difficult to pattern using conventional semiconductor processing such as reactive ion etching (RIE), ion beam etching, or chemical-mechanical polishing (CMP). Therefore there is a need for a capacitor structure which does not require a separate patterning step to define the electrodes.
For purposes of this invention, the term “oxide” layer is used generally to refer to a layer of silicon dioxide, and the silicon dioxide may be undoped or doped, for example, with boron, phosphorous, or both, to form for example borophosphosilicate glass (BPSG), and phosphosilicate glass (PSG). The silicon dioxide layers may be grown or deposited by conventional techniques.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a capacitor structure which does not require a separate patterning step to define the electrodes.
It is a further object to provide a structure which is useful for forming a discontinuous film in one process step.
It is a further object to provide such a structure which is feasible for routine manufacturing.
In accordance with the above listed and other objects, an overhanging separator structure is provided with a post projecting from a surface which may be a substrate, an underlying layer on the surface, the underlying layer having a first opening formed therein such that the post is within the first opening and at least a first distance from the underlying layer, and a separator layer on the underlying layer, the separator layer having a second opening formed therein such that the post is within the second opening and at least a second distance from the separator layer, the separator layer overhanging the underlying layer. A non-patterned discontinuous film can then be formed having a first portion on the separator layer and a second portion on the post, the discontinuity substantially in register with the second opening.
The structure is made into a stacked capacitor with the second (post) portion of the discontinuous film being the bottom electrode, by forming a dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.


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