Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2000-03-21
2001-02-20
Chaudhuri, Olik (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S300000
Reexamination Certificate
active
06191469
ABSTRACT:
FIELD OF THE INVENTION
This invention is directed to semiconductor films and the manufacture of the same, more particularly to a self-defining discontinuous film, and most particularly to a capacitor employing a self-defining electrode.
BACKGROUND OF THE INVENTION
Stacked capacitor structures using high-dielectric materials such as (Ba,Sr)TiO
3
(BST) require noble metal electrodes, such as platinum, which are very difficult to pattern using conventional semiconductor processing such as reactive ion etching (RIE), ion beam etching, or chemical-mechanical polishing (CMP). Therefore there is a need for a capacitor structure which does not require a separate patterning step to define both electrodes.
For purposes of this invention, the term “oxide” layer is used generally to refer to a layer of silicon dioxide, and the silicon dioxide may be undoped or doped, for example, with boron, phosphorous, or both, to form for example borophosphosilicate glass (BPSG), and phosphosilicate glass (PSG). The silicon dioxide layers may be grown or deposited by conventional techniques.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a capacitor structure which does not require a separate patterning step to define the electrodes.
It is a further object to provide a structure which is useful for forming a discontinuous film in one process step.
It is a further object to provide such a structure which is feasible for routine manufacturing.
In accordance with the above listed and other objects, a discontinuous film structure on a surface which may be a substrate, with an underlying layer on the surface having a first opening formed therein, a separator layer on the underlying layer having a second opening formed therein, and the second opening overlying the first opening such that the separator layer overhangs the underlying layer. A discontinuous-as-deposited film is formed on the separator layer, with the discontinuity substantially in register with the second opening. The structure is made into a stacked capacitor with the discontinuous film being the bottom electrode, by forming a continuous dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.
REFERENCES:
patent: 4725112 (1988-02-01), Bridges et al.
patent: 4830723 (1989-05-01), Galvagni et al.
patent: 5143861 (1992-09-01), Turner
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5416042 (1995-05-01), Beach et al.
patent: 5418180 (1995-05-01), Brown
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5478772 (1995-12-01), Fazan
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5504041 (1996-04-01), Summerfelt
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5534458 (1996-07-01), Okudaira et al.
patent: 5550076 (1996-08-01), Chen
patent: 5554564 (1996-09-01), Nishioka et al.
patent: 5814842 (1998-09-01), Sandhu et al.
Kotecki David E.
Ma William H.
Anderson Jay H.
Chaudhuri Olik
International Business Machines - Corporation
Wille Douglas A.
LandOfFree
Overhanging separator for self-defining discontinuous film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Overhanging separator for self-defining discontinuous film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Overhanging separator for self-defining discontinuous film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2597563