Overcurrent sensing circuit for power MOS field effect transisto

Details Overcurrent sensing circuit for power MOS field effect transisto Overcurrent sensing circuit for power MOS field effect transisto

1997-06-17

1999-05-11

Callahan, Timothy P.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

361100, 327546, 327543, 327427, H02H3/087

Patent

active

059034220

ABSTRACT:
An overcurrent sensing circuit for sensing an overcurrent flowing through a power MOS transistor is described. A voltage drop equal to the voltage across the drain and source of a power MOS transistor that changes due to change in a load current is generated in a sensing resistor that is connected between the source of a sensing MOS transistor having its gate and drain connected in common with those of the power MOS transistor and the source of the power MOS transistor due to current that flows through the sensing MOS transistor. This voltage is inputted to a comparator that has an added offset voltage, and the comparator judges that the power MOS transistor is in an overcurrent condition when this inputted voltage exceeds an input offset voltage value that is set inside the comparator.

REFERENCES:
patent: 4553084 (1985-11-01), Wrathall
patent: 4573099 (1986-02-01), Ganesan et al.
patent: 4987327 (1991-01-01), Fernandez et al.
patent: 4987379 (1991-01-01), Hughes
patent: 5043599 (1991-08-01), Zitta
patent: 5272392 (1993-12-01), Wong et al.
patent: 5422593 (1995-06-01), Fujihira
patent: 5473276 (1995-12-01), Throngnumchai
patent: 5497285 (1996-03-01), Nadd
patent: 5501517 (1996-03-01), Kiuchi
patent: 5550702 (1996-08-01), Schmidt et al.
patent: 5739712 (1998-04-01), Fujii
patent: 5789974 (1998-08-01), Ferguson, Jr. et al.

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