Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1991-03-05
1992-12-15
Gonzalez, Frank
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
361 91, 257687, 257693, 257724, H01L 2316
Patent
active
051722151
ABSTRACT:
An overcurrent-limiting type semiconductor device comprising a transistor chip fixed on the bottom of a package, the package being constructed of a bottom plate, side walls, and a lid, terminal conductors connected to electrodes of the transistor chip and drawn through the lid of the package to the outside of the package, and a current-limiting circuit connected between a base and emitter of the transistor chip. The current-limiting circuit comprises a conductor layer provided on the bottom plate of the package, and a multilayer type diode chip including a plurality of diodes constructed in a multilayer fashion and a first electrode. The multilayer type diode chip is fixed to the conductor layer at the first electrode.
REFERENCES:
patent: 4920405 (1990-04-01), Itoh et al.
Ito Shin'ichi
Kobayashi Shin-ichi
Ohkubo Toshio
Okabayashi Takeki
Fuji Electric & Co., Ltd.
Gonzalez Frank
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