Overcurrent detection circuit for a power MOSFET and method ther

Miscellaneous active electrical nonlinear devices – circuits – and – Specific signal discriminating without subsequent control – By amplitude

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327 74, 327 81, 327 88, 327432, H03K 5153, H03K 522

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active

056752687

ABSTRACT:
An overcurrent detector circuit (21) for a power MOSFET (22) is described. The overcurrent detector circuit (21) generates a bias voltage corresponding to the drain to source voltage of the power MOSFET (22). The drain to source voltage correlates directly to the current being conducted by the power MOSFET (22). An overcurrent condition occurs when the power MOSFET (22) exceeds a predetermined current. The bias voltage is applied to a transistor (24) for generating a current. A current source (29) couples to the transistor (24). The current provided by the transistor equals the reference current of the current source (29) when the power MOSFET conducts the predetermined current. The overcurrent detector circuit (21) generates a signal indicating a overcurrent condition does not exist when the reference current is greater the current provided by the transistor. Conversely, the overcurrent detector circuit (21) generates a signal indicating the overcurrent condition when the current provided by the transistor exceeds the reference current.

REFERENCES:
patent: 4453091 (1984-06-01), Katakura et al.
patent: 4749880 (1988-06-01), Kobatake
patent: 4980578 (1990-12-01), Shaffer et al.
patent: 5113089 (1992-05-01), Osawa
patent: 5187387 (1993-02-01), Kawauchi
patent: 5374857 (1994-12-01), Carsbolante

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