Overcoated amorphous silicon imaging members

Details Overcoated amorphous silicon imaging members Overcoated amorphous silicon imaging members

1985-09-30

1987-05-05

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 66, 430 84, G03G 514

Patent

active

046632581

ABSTRACT:
Disclosed is imaging member comprised of a supporting substrate, a blocking layer of hydrogenated amorphous silicon with dopants, a hydrogenated amorphous silicon photoconductive layer, a first overcoating layer of nonstoichiometric silicon nitride with from between 5 to 33 atomic percent of nitrogen and 95 to 67 atomic percent of silicon, and a second overcoating layer thereover of near stoichiometric silicon nitride with from between 33 to 57 atomic percent of nitrogen, and 67 to 43 atomic percent of silicon.

REFERENCES:
patent: 4394425 (1983-07-01), Shimizu et al.
patent: 4394426 (1983-07-01), Shimizu et al.
patent: 4409308 (1983-10-01), Shimizu et al.
patent: 4414319 (1983-11-01), Shirai et al.
patent: 4418132 (1983-11-01), Yamazaki et al.
patent: 4443529 (1984-04-01), Kanbe et al.
patent: 4452874 (1984-06-01), Ogawa et al.
patent: 4452875 (1984-06-01), Ogawa et al.
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4465750 (1984-08-01), Ogawa et al.
patent: 4477549 (1984-10-01), Fujimaki et al.
patent: 4483911 (1984-11-01), Ogawa et al.

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