Over voltage protective device and circuits for insulated gate t

Details Over voltage protective device and circuits for insulated gate t Over voltage protective device and circuits for insulated gate t

1977-03-29

1979-02-20

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, 357 41, 357 91, H01L 2126

Patent

active

041399358

ABSTRACT:
Protective devices and circuits for insulated gate transistors are improved by another p
junction diode or MOS diode preventing breakdown of the thin oxide of the protective device. The breakdown voltage of the protective device or p
diode may be tailored to a preselected voltage by altering its metallurgical junction by ion implantation or other techniques. Tailoring permits the breakdown voltage of the protective device to be independent of process and circuit specification of a protected or internal circuit. A plurality of parallel circuits connected as a protective device limits or controls secondary breakdown of the protective device.

REFERENCES:
patent: 3390019 (1968-06-01), Manchester
patent: 3534235 (1970-10-01), Bower et al.
patent: 3571914 (1971-03-01), Lands et al.
patent: 3590340 (1971-06-01), Kubo et al.
patent: 3650019 (1972-03-01), Robinson
patent: 3679492 (1972-07-01), Fang et al.
patent: 3746946 (1973-07-01), Clark
patent: 3777216 (1973-12-01), Armstrong
patent: 3793088 (1974-02-01), Eckton
patent: 3890163 (1975-06-01), Pruniaux et al.
patent: 3999212 (1976-12-01), Usuda
Fang et al., "Ion Implanted, Bidirectional High Voltage MOSFET," IBM Tech. Disc. Bull., vol. 15, No. 2, 5/73, p. 3884.

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