Over-voltage protected semiconductor device

Details Over-voltage protected semiconductor device Over-voltage protected semiconductor device

2006-07-11

2008-12-23

Leja, Ronald W (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific quantity comparison means

Reexamination Certificate

active

07468873

ABSTRACT:
In accordance with the principles of the invention, a semiconductor device is provided that has a power transistor and a voltage sensing transistor formed on a substrate. The power transistor has first and second terminals and a control terminal and having a characteristic first breakdown voltage across the first and second terminals. The voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the power transistor breakdown voltage. The second transistor provides a control signal to the power transistor control terminal when the voltage across the power transistor first and second terminals exceeds the second element characteristic breakdown voltage.

REFERENCES:
patent: 4893158 (1990-01-01), Mihara et al.
patent: 6924532 (2005-08-01), Pfirsch et al.
patent: 2008/0050876 (2008-02-01), Matocha et al.

Affiliated with

Also associated with

Rating

Over-voltage protected semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Over-voltage protected semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Over-voltage protected semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4043309